high frequency transistor npn silicon maximum ratings rating symbol value unit collectoremitter voltage v ceo 12 vdc collectorbase voltage v cbo 20 vdc emitterbase voltage v ebo 2.5 vdc collector current e continuous i c 50 madc total device dissipation @ t a = 25 c derate above 25 c p d 200 1.14 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 300 1.71 mw mw/ c storage temperature range t stg 55 to +150 c electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter sustaining voltage (i c = 3.0 madc, i b = 0) v ceo(sus) 12 e vdc collectorbase breakdown voltage (i c = 0.001 madc, i e = 0) v (br)cbo 20 e vdc emitterbase breakdown voltage (i e = 0.01 madc, i c = 0) v (br)ebo 2.5 e vdc collector cutoff current (v cb = 15 vdc, i e = 0) (v cb = 15 vdc, i e = 0, t a = 150 c) i cbo e e 0.02 1.0 m adc on characteristics dc current gain (i c = 3.0 madc, v ce = 1.0 vdc) h fe 25 250 e collectoremitter saturation voltage (i c = 10 madc, i b = 1.0 madc) v ce(sat) e 0.4 vdc baseemitter saturation voltage (i c = 10 madc, i b = 1.0 madc) v be(sat) e 1.0 vdc preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 june, 2001 rev. 2 1 publication order number: mps5179/d mps5179 on semiconductor preferred device case 2911, style 1 to92 (to226aa) 1 2 3 collector 3 2 base 1 emitter
mps5179 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit smallsignal characteristics currentgain e bandwidth product (1) (i c = 5.0 madc, v ce = 6.0 vdc, f = 100 mhz) f t 900 2000 mhz collectorbase capacitance (v cb = 10 vdc, i e = 0, f = 0.1 to 1.0 mhz) c cb e 1.0 pf small signal current gain (i c = 2.0 madc, v ce = 6.0 vdc, f = 1.0 khz) h fe 25 300 e 1. f t is defined as the frequency at which |h fe | extrapolates to unity.
mps5179 http://onsemi.com 3 package dimensions case 2911 issue al to92 (to226) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 1: pin 1. emitter 2. base 3. collector
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